Soft x-ray photoemission studies of Hf oxidation
نویسندگان
چکیده
Soft x-ray photoemission spectroscopy has been applied to determine the binding energy shifts and the valance band offset of HfO2 grown on Hf metal. Charging of oxide films upon x-ray exposure is found to be very severe and special care is taken to eliminate it. Photoemission results show the presence of metallic Hf ~from the substrate! with a 4 f 7/2 binding energy of 14.22 eV, fully oxidized Hf ~from HfO2) with a 4 f 7/2 binding energy of 18.16 eV, and at least one clearly defined suboxide peak. The position of the valence band of HfO2 with respect to the Hf~metal! Fermi level is 4.23 eV. © 2003 American Vacuum Society. @DOI: 10.1116/1.1525816#
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